Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Ta), 32A (Tc)
Drain to Source Voltage.25 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13.2 nC @ 5 V
Input Capacitance (Ciss.1333 pF @ 20 V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Part StatusObsolete
Power Dissipation (Max)1.36W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
Series-
Supplier Device PackageI-PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A
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