Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.196mA (Ta)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .1nC @ 5V
Input Capacitance (Ciss.30.3pF @ 25V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusActive
Power Dissipation (Max)347mW (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 100mA, 10V
Series-
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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