Infineon Technologies BSZ076N06NS3GATMA1

mpnBSZ076N06NS3GATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	20A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	50 nC @ 10 V
Input Capacitance (Ciss.	4000 pF @ 30 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	7.6mOhm @ 20A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TSDSON-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 35?A

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