Attributes

Key Value
Base Product NumberIXFP8N65
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .11 nC @ 10 V
Input Capacitance (Ciss.790 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Power Dissipation (Max)150W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs450mOhm @ 4A, 10V
SeriesHiPerFET?, Ultra X2
Supplier Device PackageTO-220 Isolated Tab
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1760033573.6252