Attributes

Key Value
Current - Continuous Dr.750mA (Tc)
Drain to Source Voltage.1000 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .7.8 nC @ 10 V
Input Capacitance (Ciss.260 pF @ 25 V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)40W (Tc)
Rds On (Max) @ Id, Vgs17Ohm @ 375mA, 10V
Series-
Supplier Device PackageTO-263
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 250?A
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