Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.35.7A (Ta), 234A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .167 nC @ 4.5 V
Input Capacitance (Ciss.12120 pF @ 15 V
Mfronsemi
Mounting TypeSurface Mount, Wettable.
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)3.9W (Ta), 168.7W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs1.8mOhm @ 23A, 10V
Series-
Supplier Device Package5-DFNW (4.9x5.9) (8-SOF.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id3V @ 250?A
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