Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .152 nC @ 10 V
Input Capacitance (Ciss.3400 pF @ 10 V
MfrRenesas
Mounting TypeThrough Hole
Operating Temperature150?C
PackageBulk
Package / CaseTO-220-3 Full Pack, Iso.
Power Dissipation (Max)2W (Ta), 35W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs9mOhm @ 25A, 10V
Series-
Supplier Device PackageITO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 1mA
prev


As an Amazon Associate I earn from qualifying purchases.

1760034768.0135