Attributes

Key Value
Base Product NumberHAT2169
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Ta)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .45 nC @ 4.5 V
Input Capacitance (Ciss.6650 pF @ 10 V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Power Dissipation (Max)30W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3.5mOhm @ 25A, 10V
Series-
Supplier Device PackageLFPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 1mA
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