Toshiba Semiconductor and Storage TK560P60Y,RQ

mpnTK560P60Y,RQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK560P60
Category	Discrete Semiconductor .
Current - Continuous Dr.	7A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	14.5 nC @ 10 V
Input Capacitance (Ciss.	380 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Power Dissipation (Max)	60W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	560mOhm @ 3.5A, 10V
Series	DTMOSV
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 240?A

As an Amazon Associate I earn from qualifying purchases.

1760036442.2022