SUD09P10-195-GE3-VISHAY

B011NN7P6O

VISHAY SILICONIX SUD09P10-195-GE3 MOSFET,P CH,DIODE,100V,8.8A,TO-252 (1 piece)

VISHAY SILICONIX SUD09P10-195-GE3 MOSFET,P CH,DIODE,100V,8.8A,TO-252 (1 piece)zoom

Attributes

Key Value
Base Product NumberSUD09
CaseDPAK,
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8.8A (Tc)
DescriptionMOSFET P-CH 100V 8.8A T.
Detailed DescriptionP-Channel 100 V 8.8A (T.
Digi-Key Part NumberSUD09P10-195-GE3TR-ND -.
Drain current-8.8A
Drain to Source Voltage.100 V
Drain-source voltage-100V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate charge34.8nC
Gate Charge (Qg) (Max) .34.8 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.1055 pF @ 50 V
Kind of channelenhanced
Kind of packagereel,
ManufacturerVishay Siliconix, VISHAY
Manufacturer Product Nu.SUD09P10-195-GE3
Manufacturer Standard L.17 Weeks
MfrVishay Siliconix
MountingSMD
Mounting TypeSurface Mount
On-state resistance0.195?
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Polarisationunipolar
Power dissipation32.1W
Power Dissipation (Max)2.5W (Ta), 32.1W (Tc)
Product StatusActive
Pulsed drain current-15A
Rds On (Max) @ Id, Vgs195mOhm @ 3.6A, 10V
SeriesTrenchFET?
Supplier Device PackageTO-252AA, TO-252, (D-Pa.
TechnologyMOSFET (Metal Oxide)
Type of transistorP-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18068310.3512000Vishay/Siliconix0.35 @ 10
thumbzoomNewark86R42580.393200010VISHAY0.393 @ 2000
RS Delivers180-74120.45110Vishay0.45 @ 10
Future Electronics90121660.496220004000Vishay0.4962 @ 2000
thumbzoomTMESUD09P10-195-GE30.89310VISHAY0.89 @ 10
thumbzoomDigi-Key24418320.9288138045Vishay Siliconix0.9288 @ 10
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