Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
DescriptionN-CHANNEL POWER MOSFET
Detailed DescriptionN-Channel 100 V 100A (T.
Digi-Key Part Number2156-IPP05CN10NGXK-ND
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .181 nC @ 10 V
Input Capacitance (Ciss.12000 pF @ 50 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPP05CN10NGXK
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3
Power Dissipation (Max)300W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.4mOhm @ 100A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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