Attributes

Key Value
Base Product NumberIXTP1
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.6A (Tc)
DescriptionMOSFET N-CH 500V 1.6A T.
Detailed DescriptionN-Channel 500 V 1.6A (T.
Digi-Key Part NumberIXTP1R6N50D2-ND
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .-
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) .23.7 nC @ 5 V
Input Capacitance (Ciss.645 pF @ 25 V
ManufacturerIXYS
Manufacturer Product Nu.IXTP1R6N50D2
Manufacturer Standard L.63 Weeks
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)100W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.3Ohm @ 800mA, 0V
SeriesDepletion
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-
prev


As an Amazon Associate I earn from qualifying purchases.

1760045390.1797