Attributes

Key Value
CaseSMPD
Drain current600A
Drain-source voltage40V
Gate charge590nC
Gate-source voltage?20V
Kind of channelenhanced
ManufacturerIXYS
MountingSMD
On-state resistance1.3m?
Polarisationunipolar
Power dissipation830W
Pulsed drain current2kA
Reverse recovery time100ns
TechnologyGigaMOS?,
Type of transistorN-MOSFET
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