Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.20A (Tc)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .47nC @ 30V
Input Capacitance (Ciss.500pF @ 30V
MfrRectron USA
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)45W (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 20A, 10V
Series-
Supplier Device PackageTO-252-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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