Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.40A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .18.8 nC @ 10 V
Input Capacitance (Ciss.1320 pF @ 30 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Power Dissipation (Max)2W (Ta), 59W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7.1mOhm @ 40A, 10V
Series-
Supplier Device Package8-HSMT (3.2x3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 1mA
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