STMicroelectronics STW57N65M5-4

mpnSTW57N65M5-4
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Current - Continuous Dr.	42A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	98 nC @ 10 V
Input Capacitance (Ciss.	4200 pF @ 100 V
Mfr	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package / Case	TO-247-4
Part Status	Active
Power Dissipation (Max)	250W (Tc)
Rds On (Max) @ Id, Vgs	63mOhm @ 21A, 10V
Supplier Device Package	TO-247-4L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?25V
Vgs(th) (Max) @ Id	5V @ 250?A

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