mpn
YJD20N06A-F1-0000HF
brand
name: Yangzhou Yangjie Electronic Technology Co.,Ltd
manufacturer
name: Yangzhou Yangjie Electronic Technology Co.,Ltd
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
20A (Tc)
Drain to Source Voltage.
60 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
15 nC @ 10 V
Input Capacitance (Ciss.
800 pF @ 30 V
Mfr
Yangzhou Yangjie Electr.
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-252-3, DPak (2 Leads.
Power Dissipation (Max)
34W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
43mOhm @ 20A, 10V
Series
-
Supplier Device Package
TO-252
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2.5V @ 250?A