Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.35A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .4.5V, 10V
FET FeatureTemperature Sensing Dio.
FET TypeN-Channel
Gate Charge (Qg) (Max) .130 nC @ 10 V
Input Capacitance (Ciss.2660 pF @ 25 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-40?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-5
Part StatusObsolete
Power Dissipation (Max)170W (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 19A, 10V
SeriesTEMPFET?
Supplier Device PackageP-TO220-5-43
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 130?A
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