Infineon IPB80N06S2L06ATMA2

mpnIPB80N06S2L06ATMA2
brandname: Infineon Technologies
manufacturername: Infineon Technologies

INFINEON IPB80N06S2L06ATMA2 Single N-Channel 55 V 6.3 mOhm 150 nC OptiMOS Power Mosfet - D2PAK - 1000 item(s)

INFINEON IPB80N06S2L06ATMA2 Single N-Channel 55 V 6.3 mOhm 150 nC OptiMOS Power Mosfet - D2PAK - 1000 item(s)

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Brand: Infineon
PartNumber: IPB80N06S2L06ATMA2
Model: IPB80N06S2L06ATMA2
PackageQuantity: 1
Manufacturer: INFINEON
Label: INFINEON

Attributes

Key	Value
Base Product Number	IPB80N
Category	Discrete Semiconductor .
Current - Continuous Dr.	80A (Tc)
Drain to Source Voltage.	55 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	150 nC @ 10 V
Input Capacitance (Ciss.	3800 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	250W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	6mOhm @ 69A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 180?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Future Electronics	9092411	1.062	1000	1000		Infineon		1.062 @ 1000
	Digi-Key	6560181	1.82512	1	1000		Infineon Technologies		1.82512 @ 1000
	Newark	79AK2200	1.84	1	1000		INFINEON		1.84 @ 1000

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