Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.90A
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .34 nC @ 10 V
Input Capacitance (Ciss.2000 pF @ 35 V
MfrMicro Commercial Co
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)83W
Rds On (Max) @ Id, Vgs7.5mOhm @ 20A, 10V
Series-
Supplier Device PackageTO-220AB (H)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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