Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Ta)
Drain to Source Voltage.40V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .8nC @ 4.5V
Input Capacitance (Ciss.650pF @ 20V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusObsolete
Power Dissipation (Max)1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs112mOhm @ 5A, 4.5V
Series-
Supplier Device PackageDPAK/TP-FA
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 1mA
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