Rohm Semiconductor BSM600D12P3G001

mpnBSM600D12P3G001
brandname: Rohm Semiconductor
manufacturername: Rohm Semiconductor

Attributes

Key	Value
Base Product Number	BSM600
Category	Discrete Semiconductor .
Current - Continuous Dr.	600A (Tc)
Drain to Source Voltage.	1200V (1.2kV)
FET Feature	Silicon Carbide (SiC)
FET Type	2 N-Channel (Half Bridg.
Gate Charge (Qg) (Max) .	-
Input Capacitance (Ciss.	31000pF @ 10V
Mfr	Rohm Semiconductor
Mounting Type	Chassis Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Bulk
Package / Case	Module
Part Status	Active
Power - Max	2450W (Tc)
Rds On (Max) @ Id, Vgs	-
Series	-
Supplier Device Package	Module
Vgs(th) (Max) @ Id	5.6V @ 182mA

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