Attributes

Key Value
Base Product NumberSCT4062
CategoryDiscrete Semiconductor .
Current - Continuous Dr.26A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .18V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .64 nC @ 18 V
Input Capacitance (Ciss.1498 pF @ 800 V
MfrRohm Semiconductor
Mounting TypeThrough Hole
Operating Temperature175?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)115W
Product StatusActive
Rds On (Max) @ Id, Vgs81mOhm @ 12A, 18V
Series-
Supplier Device PackageTO-247N
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+21V, -4V
Vgs(th) (Max) @ Id4.8V @ 6.45mA
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