Attributes

Key Value
Base Product NumberDMP2900
CategoryDiscrete Semiconductor .
Current - Continuous Dr.990mA (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .0.7 nC @ 4.5 V
Input Capacitance (Ciss.49 pF @ 16 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case3-UFDFN
Power Dissipation (Max)550mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs750mOhm @ 430mA, 4.5V
Series-
Supplier Device PackageX1-DFN1006-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?6V
Vgs(th) (Max) @ Id1V @ 250?A
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