Attributes

Key Value
@Ic (test) (A)1.0
@VCE (V)50
CaseTO3
Collector Capacitance (.300 pF
Derate (Amb) (W/?C)960m
Forward Current Transfe.80
Ic Max. (A)12
Icbo Max. @Vcb Max. (A)50u
ManufacturerFujitsu
Max. hFE200
Max. Operating Junction.150 ?C
Max. PD (W)120
Maximum Collector Curre.12 A
Maximum Collector Power.120 W
Maximum Collector-Base .150 V
Maximum Collector-Emitt.150 V
Maximum Emitter-Base Vo.7 V
Min hFE60
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-14
PolarityPNP
R(sat) (?)360m
SKU116311
Surface Mounted Yes/NoNO
t(f) Max. (S)110n-
Tr Max. (s)150n-
Trans. Freq (Hz) Min.60M
Transition Frequency (f.60 MHz
TypeTransistor Silicon PNP
Vbr CBO150
Vbr CEO150
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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