Attributes

Key Value
Base Product NumberIPD22N08
CategoryDiscrete Semiconductor .
Current - Continuous Dr.27A (Tc)
Drain to Source Voltage.75 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .33 nC @ 10 V
Input Capacitance (Ciss.630 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)75W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs50mOhm @ 50A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 31?A
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