Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13A (Tc)
Drain to Source Voltage.200 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .38 nC @ 10 V
Input Capacitance (Ciss.830 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)110W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs235mOhm @ 8A, 10V
SeriesHEXFET?
Supplier Device PackageD-PAK (TO-252AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5.5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1760069278.7915