Attributes

Key Value
Base Product NumberIXTA100
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .25.5 nC @ 10 V
Input Capacitance (Ciss.2690 pF @ 25 V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)150W (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 25A, 10V
SeriesTrenchT2?
Supplier Device PackageTO-263AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1760060400.6770