SIR164DP-T1-GE3

MOSFET 30V 50A 69W 2.5mohm @ 10V (1 piece)

MOSFET 30V 50A 69W 2.5mohm @ 10V (1 piece)zoom

Attributes

Key Value
Alternate Part No.781-SIR164DP-GE3
Base Product NumberSIR164
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
Channel ModeEnhancement
ConfigurationSingle Quad Drain Tripl.
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
Fall Time39 ns
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .123 nC @ 10 V
Id - Continuous Drain C.33.3 A
Input Capacitance (Ciss.3950 pF @ 15 V
ManufacturerVishay
Manufacturer Part No.SIR164DP-T1-GE3
Maximum Operating Tempe.+ 150 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Package/CasePowerPAK SO-8
PackagingReel
Part # AliasesSIR164DP-GE3
Pd - Power Dissipation5.2 W
Power Dissipation (Max)5.2W (Ta), 69W (Tc)
Product CategoryMOSFET
Product StatusActive
Rds On (Max) @ Id, Vgs2.5mOhm @ 15A, 10V
Rds On - Drain-Source R.2.5 mOhms
Rise Time41 ns
SeriesTrenchFET?, SIRxxxDP
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Transistor PolarityN-Channel
Type of transistorN-MOSFET
Typical Turn-Off Delay .52 ns
Vds - Drain-Source Brea.30 V
Vgs (Max)?20V
Vgs - Gate-Source Break.20 V
Vgs(th) (Max) @ Id2.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18096040.58813000Vishay/Siliconix0.588 @ 10
Future Electronics60007300.642300010Vishay0.642 @ 3000
Newark15R48760.66300010VISHAY0.66 @ 2000
TMESIR164DP-T1-GE31.05300010VISHAY1.05 @ 3000
Digi-Key24424421.56745110Vishay Siliconix1.56745 @ 10
thumbzoomswatee.comSIR164DP-T1-GE32.7911002Vishay2.79 @ 10
thumbzoomComponent Electronics164DP-T1-GE3-VISH9.231500Vishay9.23 @ 10
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