IXYS IXFT30N50Q

mpnIXFT30N50Q
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	30A (Tc)
Drain to Source Voltage.	500 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	190 nC @ 10 V
Input Capacitance (Ciss.	4925 pF @ 25 V
Mfr	IXYS
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-268-3, D?Pak (2 Lead.
Part Status	Obsolete
Power Dissipation (Max)	360W (Tc)
Rds On (Max) @ Id, Vgs	160mOhm @ 15A, 10V
Series	HiPerFET?
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 4mA

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