Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1A (Ta)
Drain to Source Voltage.600V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .3.8nC @ 10V
Input Capacitance (Ciss.65pF @ 20V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-251-3 Short Leads, I.
Part StatusObsolete
Power Dissipation (Max)1W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs13Ohm @ 500mA, 10V
Series-
Supplier Device PackageIPAK/TP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id-
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