Renesas Electronics America NP109N04PUG-E1-AY

mpnNP109N04PUG-E1-AY
brandname: Renesas Electronics America
manufacturername: Renesas Electronics America

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	110A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	270 nC @ 10 V
Input Capacitance (Ciss.	15750 pF @ 25 V
Mfr	Renesas Electronics Ame.
Mounting Type	Surface Mount
Operating Temperature	175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Active
Power Dissipation (Max)	1.8W (Ta), 220W (Tc)
Rds On (Max) @ Id, Vgs	2.3mOhm @ 55A, 10V
Series	-
Supplier Device Package	TO-263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A

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