Attributes

Key Value
@Ic (test) (A)500m
@VCE (V)2.0
CaseSOT32
Collector Capacitance (.45 pF
Derate Above 25?C71m
Forward Current Transfe.120
Ic Max. (A)5.0
Icbo Max. @Vcb Max. (A)1.0u
ManufacturerSanyo Semiconductor
Max. hFE200
Max. Operating Junction.150 ?C
Max. PD (W)10
Maximum Collector Curre.5 A
Maximum Collector Power.10 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.20 V
Maximum Emitter-Base Vo.6 V
Min hFE120
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityNPN
SKU571838
Surface Mounted Yes/NoNO
t(f) Max. (S)340n+
Tr Max. (s)30n
Trans. Freq (Hz) Min.120M
Transition Frequency (f.120 MHz
TypeTransistor Silicon NPN
Vbr CBO60
Vbr CEO20
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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