Attributes

Key Value
Base Product NumberIRFIBF20
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.2A (Tc)
DescriptionMOSFET N-CH 900V 1.2A T.
Detailed DescriptionN-Channel 900 V 1.2A (T.
Digi-Key Part NumberIRFIBF20G-ND
Drain to Source Voltage.900 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .38 nC @ 10 V
Input Capacitance (Ciss.490 pF @ 25 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.IRFIBF20G
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Power Dissipation (Max)30W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs8Ohm @ 720mA, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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