SI1922EDH-T1-GE3-VISHAY_IT

B011N9PNGW

VISHAY SILICONIX SI1922EDH-T1-GE3 DUAL N-CHANNEL 20-V (D-S) MOSFET (1 piece)

VISHAY SILICONIX SI1922EDH-T1-GE3 DUAL N-CHANNEL 20-V (D-S) MOSFET (1 piece)zoom

Attributes

Key Value
Base Product NumberSI1922
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.3A
Drain to Source Voltage.20V
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) .2.5nC @ 8V
Input Capacitance (Ciss.-
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max1.25W
Product StatusActive
Rds On (Max) @ Id, Vgs198mOhm @ 1A, 4.5V
SeriesTrenchFET?, SI19 Series
Supplier Device PackageSC-70-6
Vgs(th) (Max) @ Id1V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics90199900.130830003000Vishay0.1308 @ 3000
Digi-Key36799800.176467513000Vishay Siliconix0.1764675 @ 3000
us.rs-online.com706161500.181243003000Siliconix / Vishay0.18124 @ 3000
thumbzoomNewark64T40560.289519980VISHAY0.289 @ 3000
RS Delivers812-30910.4213000Vishay0.42 @ 3000
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