Attributes

Key Value
Base Product NumberSI2392
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.1A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .10.4 nC @ 10 V
Input Capacitance (Ciss.196 pF @ 50 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)1.25W (Ta), 2.5W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs126mOhm @ 2A, 10V
SeriesTrenchFET?
Supplier Device PackageSOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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