Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5A (Ta)
Drain to Source Voltage.55V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .11nC @ 5V
Input Capacitance (Ciss.380pF @ 25V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Part StatusActive
Power Dissipation (Max)1W (Ta)
Rds On (Max) @ Id, Vgs60mOhm @ 3A, 10V
SeriesHEXFET?
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id3V @ 250?A
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