Attributes

Key Value
Base Product NumberIPT60R105
CategoryDiscrete Semiconductor .
Current - Continuous Dr.24A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .36 nC @ 10 V
Input Capacitance (Ciss.1503 pF @ 400 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerSFN
Power Dissipation (Max)140W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs105mOhm @ 7.8A, 10V
SeriesCoolMOS? CFD7
Supplier Device PackagePG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 390?A
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