mpn
NXV65UPR
brand
name: Nexperia USA Inc.
manufacturer
name: Nexperia USA Inc.
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
2.1A (Ta)
Drain to Source Voltage.
20 V
Drive Voltage (Max Rds .
1.8V, 4.5V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) .
8.7 nC @ 4.5 V
Input Capacitance (Ciss.
458 pF @ 10 V
Mfr
Nexperia USA Inc.
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-236-3, SC-59, SOT-23.
Power Dissipation (Max)
340mW (Ta), 2.1W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
70mOhm @ 2.1A, 4.5V
Series
TrenchMOS?
Supplier Device Package
TO-236AB
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?8V
Vgs(th) (Max) @ Id
1V @ 250?A