STMicroelectronics STB38N65M5

B07N4CTZWD

STB38N65M5, Trans MOSFET N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R (5 Items)

STB38N65M5, Trans MOSFET N-CH 650V 30A 3-Pin(2+Tab) D2PAK T/R (5 Items)zoom

Attributes

Key Value
Base Product NumberSTB38
CaseD2PAK
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain current19A
Drain to Source Voltage.650 V
Drain-source voltage650V
Drive Voltage (Max Rds .10V
ECCN EUEAR99
ECCN USParameter Value
Features of semiconduct.ESD protected gate
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .71 nC @ 10 V
Gate-source voltage?25V
GradeEcopack2
Input Capacitance (Ciss.3000 pF @ 100 V
Kind of channelenhanced
Kind of packagereel,
ManufacturerSTMicroelectronics
MfrSTMicroelectronics
MountingSMD
Mounting TypeSurface Mount
On-state resistance95m?
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Package NameIndustrial
Packing TypeNEC
Polarisationunipolar
Power dissipation190W
Power Dissipation (Max)190W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V
RoHs compliantTape And Reel
SeriesMDmesh? V
Supplier Device PackageD?PAK (TO-263)
TechnologySuperMesh?, MOSFET (Met.
Type of transistorN-MOSFET
Vgs (Max)?25V
Vgs(th) (Max) @ Id5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomTMESTB38N65M53.9315STMicroelectronics3.93 @ 5
HotendaH18145924.727715STMicroelectronics4.7277 @ 5
Future Electronics10231565.32810005STMicroelectronics5.328 @ 1000
thumbzoomst.comSTB38N65M56.5215STMicroelectronics6.52 @ 5
thumbzoomNewark34AC19817.6711937STMICROELECTRONICS7.67 @ 5
Digi-Key34743558.2215STMicroelectronics8.22 @ 5
RS Delivers783-30598.60415STMicroelectronics8.604 @ 5
AmazonTPB07N4CTZWD62.64152STMicroelectronics62.64 @ 5
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