Attributes

Key Value
Base Product NumberSTP45
CategoryDiscrete Semiconductor .
Current - Continuous Dr.34A (Tc)
Drain to Source Voltage.600V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .56nC @ 10V
Input Capacitance (Ciss.2500pF @ 100V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)250W (Tc)
Rds On (Max) @ Id, Vgs93mOhm @ 17A, 10V
SeriesAutomotive, AEC-Q101, M.
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id5V @ 250?A
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