Toshiba Semiconductor and Storage SSM3J353F,LF

mpnSSM3J353F,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	4V, 10V
Drain to Source Voltage.	3.4nC @ 4.5V
Drive Voltage (Max Rds .	150mOhm @ 2A, 10V
FET Feature	600mW (Ta)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	159pF @ 15V
Mfr	Toshiba Semiconductor a.
Mounting Type	S-Mini
Operating Temperature	Surface Mount
Package	Active
Package / Case	30V
Part Status	P-Channel
Power Dissipation (Max)	150?C
Rds On (Max) @ Id, Vgs	2.2V @ 250?A
Series	Tape & Reel (TR)
Supplier Device Package	TO-236-3, SC-59, SOT-23.
Technology	2A (Ta)
Vgs (Max)	-
Vgs(th) (Max) @ Id	+20V, -25V

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