Toshiba Semiconductor and Storage SSM3J353F,LF

mpnSSM3J353F,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	SSM3J353
Category	Discrete Semiconductor .
Current - Continuous Dr.	2A (Ta)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	3.4 nC @ 4.5 V
Input Capacitance (Ciss.	159 pF @ 15 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Part Status	Active
Power Dissipation (Max)	600mW (Ta)
Rds On (Max) @ Id, Vgs	150mOhm @ 2A, 10V
Series	U-MOSVI
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -25V
Vgs(th) (Max) @ Id	2.2V @ 250?A

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