Vishay Siliconix SI2312CDS-T1-BE3

mpnSI2312CDS-T1-BE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	5A (Ta), 6A (Tc)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	1.8V, 4.5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	18 nC @ 5 V
Input Capacitance (Ciss.	865 pF @ 10 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	31.8mOhm @ 5A, 4.5V
Series	-
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?8V
Vgs(th) (Max) @ Id	1V @ 250?A

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