Infineon Technologies IPP70N12S3L12AKSA1

mpnIPP70N12S3L12AKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPP70N
Category	Discrete Semiconductor .
Current - Continuous Dr.	70A (Tc)
Drain to Source Voltage.	120 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	77 nC @ 10 V
Input Capacitance (Ciss.	5550 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	125W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	12.1mOhm @ 70A, 10V
Series	Automotive, AEC-Q101, O.
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.4V @ 83?A

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