Attributes

Key Value
Base Product NumberSCT3080
CategoryDiscrete Semiconductor .
Current - Continuous Dr.31A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .18V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60 nC @ 18 V
Input Capacitance (Ciss.785 pF @ 800 V
MfrRohm Semiconductor
Mounting TypeThrough Hole
Operating Temperature175?C (TJ)
PackageTube
Package / CaseTO-247-4
Power Dissipation (Max)165W
Product StatusActive
Rds On (Max) @ Id, Vgs104mOhm @ 10A, 18V
Series-
Supplier Device PackageTO-247-4L
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -4V
Vgs(th) (Max) @ Id5.6V @ 5mA
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