Attributes

Key Value
Base Product NumberSSM3J134
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.2A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .4.7 nC @ 4.5 V
Input Capacitance (Ciss.290 pF @ 10 V
MfrToshiba Semiconductor a.
Mounting TypeSurface Mount
Operating Temperature150?C
PackageTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Power Dissipation (Max)500mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs93mOhm @ 1.5A, 4.5V
SeriesU-MOSVI
Supplier Device PackageUFM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 1mA
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