Infineon IPP048N12N3 G

mpnIPP048N12N3 G
brandname: Infineon Technologies
manufacturername: Infineon Technologies

IPP048N12N3 G

IPP048N12N3 G

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Brand: Infineon
PartNumber: IPP048N12N3 G
Size: 1 Piece
PackageQuantity: 1
Manufacturer: Infineon
Label: Infineon

Attributes

Key	Value
Alternate Part No.	726-IPP048N12N3GXK
Brand	Infineon Technologies
Category	Discrete Semiconductor .
Fall Time	19 ns
Forward Transconductanc.	162 S, 81 S
Id - Continuous Drain C.	100 A
Manufacturer	Infineon
Manufacturer Part No.	IPP048N12N3 G
Maximum Operating Tempe.	+ 175 C
Mfr	Infineon Technologies
Minimum Operating Tempe.	- 55 C
Mounting Style	Through Hole
Package	Bulk
Package/Case	TO-220-3
Packaging	Tube
Part # Aliases	IPP048N12N3GXKSA1 SP000.
Part Status	Obsolete
Pd - Power Dissipation	300 W
Product Category	MOSFET
Qg - Gate Charge	137 nC
Rds On - Drain-Source R.	4.8 mOhms
Rise Time	55 ns
Series	*, IPP048N12
Tradename	OptiMOS
Transistor Polarity	N-Channel
Typical Turn-Off Delay .	64 ns
Vds - Drain-Source Brea.	120 V
Vgs - Gate-Source Break.	20 V
Vgs th - Gate-Source Th.	3 V

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Hotenda	H1816847	3.52	1	2701		Infineon Technologies		3.52 @ 1
	swatee.com	IPP048N12N3 G	6.39	1	647		Infineon		6.39 @ 1
	Digi-Key	12094625	13.51	1	66		Infineon Technologies		13.51 @ 1

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