Attributes

Key Value
Base Product NumberSCTWA30
CategoryDiscrete Semiconductor .
Current - Continuous Dr.45A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .105 nC @ 20 V
Input Capacitance (Ciss.1700 pF @ 400 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 200?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)270W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Series-
Supplier Device PackageHiP247? Long Leads
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+25V, -10V
Vgs(th) (Max) @ Id3.5V @ 1mA (Typ)
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