Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.16A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.2 nC @ 4.5 V
Input Capacitance (Ciss.720 pF @ 480 V
MfrTransphorm
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / Case4-PowerDFN
Power Dissipation (Max)81W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs180mOhm @ 10A, 8V
Series-
Supplier Device PackagePQFN (8x8)
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)?18V
Vgs(th) (Max) @ Id2.6V @ 500?A
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